Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.3: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

Comparison of GaN layers grown by Molecular Beam Epitaxy and by Sputtering technique — •Anne Sekels, Pascal Hille, Philipp Schurig, Martin Becker, Jörg Schörmann, and Angelika Polity — Institute for Exp. Physics I and Center for Materials Research (LaMa), Justus Liebig University Giessen, Germany

In the last decade, group III-nitrides have become one of the most important classes of semiconductor materials. In particular, GaN and the ternary compounds (Al, In, Ga)N thin films are used in a variety of commercial optoelectronic and electronic devices. Nitride materials are pre-dominantly grown by heteroepitaxy on different substrates. Metal organic vapor phase epitaxy and molecular beam epitaxy (MBE) are the most important growth techniques. However, these substrates and growth techniques are quite expensive. In this study we compare cheap sputtering technique and plasma-assisted molecular beam epitaxy to grow GaN homoepitaxially on GaN/Si (001) templates. The GaN layer thickness was about 400-500 nm in both cases. The influence of growth parameters, e.g. Ga-flux, N-flux during MBE and additional Ar-flux during sputter process on the structural properties, carried out by X-ray diffraction (XRD) and atomic force microscopy (AFM), is investigated.