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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.45: Poster

Mittwoch, 3. April 2019, 17:30–20:00, Poster E

Enhanced Biexciton Emission from single Quantum Dots encased in N-type Semiconductor — •Zhijie Li^1,2,3,4, Guofeng Zhang^3,4, Bin Li^3,4, Ruiyun Chen^3,4, Chengbing Qin^3,4, Yan Gao^3,4, Liantuan Xiao^3,4, and Suotang Jia^3,4 — ¹Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden 01328, Germany — ²Technische Universität Dresden, 01062 Dresden, Germany — ³State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, 030006, China — ⁴Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China

By encasing single near-infrared emitting CdSeTe/ZnS3ML core/multishell quantum dots (QDs) in N-type semiconductor indium tin oxide (ITO) nanoparticles, an enhanced biexciton emission can be realized. The ITO nanoparticles with a high electron density can increase the dielectric screening of single QDs to reduce the Coulomb interactions between carriers, thus suppressing the nonradiative Auger recombination of biexcitons. It is observed that an average g(2)(0)=0.57 in the second-order correlation function curves, which indicates the effective creation of biexciton and subsequent twophoton emission from single QDs encased in ITO nanoparticles. The fluorescence quantum yield ratio of the biexciton to single-exciton emission is increased to ~4.8 times, while the Auger recombination rate reduces by almost an order of magnitude.