Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.5: Poster
Mittwoch, 3. April 2019, 17:30–20:00, Poster E
Photoelectrochemical Etching of GaN/AlGaN Heterostructures — •Lukas Peters1,2, Christoph Margenfeld1,2, Hergo-Heinrich Wehmann1,2, and Andreas Waag1,2 — 1Institut für Halbleitertechnik und epitaxy competence center ec2, Technische Universität Braunschweig, 38106 Braunschweig, Germany — 2Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, 38092 Braunschweig, Germany
In this work, we demonstrate the adaptation of photoelectrochemical (PEC) wet etching on bandgap selective etching of three-dimensional core-shell GaN/AlGaN heterostructures using potassium hydroxide (KOH). As a basis, the influence of KOH molarity, temperature, and UV-A illumination power on the etch rate and surface morphology were studied. Analyses by profilometry, scanning electron microscopy (SEM), and cathodoluminescence (CL) confirm a strong etch rate enhancement using PEC etching compared to conventional KOH-based wet-etching, as well as strong selectivity to GaN. Furthermore, PEC etching was employed on core-shell structures for selective removal of the GaN core with respect to an AlGaN shell whose demonstration would constitute a major step towards manufacturing three-dimensional UV emitters.