Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.60: Poster
Wednesday, April 3, 2019, 17:30–20:00, Poster E
Towards near-infrared emitting InP quantum dot VECSELs — •Marius Großmann, Lea Stassen, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart
The near-infrared spectral range has various applications in atom spectroscopy as well as medicine. These benefit from a diffraction-limited beam profile and high output powers which can be obtained using e.g. vertical external-cavity surface-emitting lasers (VECSELs). Implementing quantum dots (QDs) as the active region provides advantages compared to quantum well (QW) VECSELs such as a decreased lasing threshold and temperature dependence, improved gain and tunability of emission wavelength. Especially the wavelength flexibility allows a target emission wavelength just above 700 nm, where GaInP and AlGaAs QWs suffer from high compressive strain and oxidation, respectively.
Our semiconductor structures comprise an InP QD/AlGaInP active region and VECSEL structures are fabricated including AlGaAs/AlAs based DBRs grown using metal-organic vapor-phase epitaxy.
Current research focuses on optimization of growth parameters of the individual active region layers in view of spectral and luminescence properties as well as interfacial morphology.