Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.68: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

Optical pulse train stability of monolithic passively mode-locked quantum dot lasers on silicon emitting at 1310 nm — Dominik Auth¹, Songtao Liu², •Stefan Breuer¹, and John Bowers² — ¹Institute of Applied Physics, Technische Universität Darmstadt, Schlossgartenstraße 7, 64289 Darmstadt, Germany — ²Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-9560, USA

Passively mode-locked InAs/InGaAs quantum dot lasers directly grown on silicon and emitting at 1310 nm are promising sources for high-speed, high-capacity communication applications. Their ultrafast carrier dynamics, broadband gain spectra and easily saturated gain and absorption allow for the generation of ultra-short optical pulses [Liu et al., Appl. Phys. Lett. 113 (2018), 041108]. In this contribution, the pulse train stability of monolithic passively mode-locked quantum dot lasers consisting of InAs/InGaAs dots-in-a-well structures and directly grown on on-axis (001) Si is experimentally studied. Pulse train stability is quantified by relative amplitude jitter and pulse-to-pulse timing jitter in the radio-frequency domain and is complemented by temporal and spectral domain analysis. Stable mode-locking with a pulse-to-pulse timing jitter well below 100 fs, ultra-low relative amplitude jitter and optical spectra widths exceeding 5 nm are experimentally demonstrated.