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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.69: Poster
Mittwoch, 3. April 2019, 17:30–20:00, Poster E
Experimental studies on modal gain, absorption and dispersion of nanostructured edge-emitting monolithic semiconductor lasers — Felix Wilke1, Stefan Heppe1, •Christoph Weber1, Dominik Auth1, Quentin Gaimard2, Abderrahim Ramdane2, Andreas Klehr3, Andrea Knigge3, Igor Krestnikov4, Thomas Walther1, Jérôme Faist5, and Stefan Breuer1 — 1Institute of Applied Physics, Technische Universität Darmstadt, Schlossgartenstraße 7, 64289 Darmstadt, Germany — 2Centre de Nanosciences et Nanotechnologies (C2N), CNRS, Marcoussis 91460, France — 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany — 4Innolume GmbH, Konrad-Adenauer-Allee 11, 44263 Dortmund, Germany — 5Institute for Quantum Electronics, ETH Zürich, Auguste-Piccard-Hof 1, 8093 Zürich, Switzerland
The generation of stable and ultrafast optical pulse trains by edge-emitting monolithic passive mode-locked and self mode-locked semiconductor lasers in the near-infrared wavelength range requires a delicate balance of differential gain, absorption and dispersion. Spectrally resolved modal gain, absorption and group delay dispersion properties of monolithic cavity single-section and two-section semiconductor lasers with quantum well and nanostructured active regions are studied experimentally. The laser structures include quantum well lasers emitting at 1070 nm, quantum dot lasers emitting at 1250 nm and quantum dash lasers emitting at 1550 nm.