Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.71: Poster
Wednesday, April 3, 2019, 17:30–20:00, Poster E
Modal gain and dispersion of monolithic broad-area InAs/InGaAs quantum dot lasers — •Dominik Auth1, Christoph Weber1, Stefan Breuer1, Vladimir V. Korenev2, Artem V. Savelyev2, Mikhail V. Maximov2, and Alexey E. Zhukov2 — 1Institute of Applied Physics, Technische Universität Darmstadt, Schlossgartenstraße 7, 64289 Darmstadt, Germany — 2St. Petersburg Academic University RAS, ul. Khlopina 8/3, 194021 St. Petersburg, Russia
Monolithic mode-locked edge-emitting semiconductor quantum dot lasers emitting at 1.31 micrometer are ideal sources for the generation of broad optical frequency combs for short-reach inter- and intra data-center links. The modal dispersion and gain properties determine their suitability for ultrashort optical pulse generation by mode-locking. In this contribution, the modal gain and dispersion properties of InAs/InGaAs quantum dot lasers with broad-ridge waveguide are studied experimentally. Our analysis focuses on spectrally-resolved gain and group delay dispersion analysis. This work is supported by the Russian Foundation for Basic Research (project #18-502-12081).