Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.7: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

A comparative study of ultrathin c-plane GaInN/GaN quantum wells grown by MBE and MOVPE — •André Schendel, Dominic Tetzlaff, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institut für Angewandte Physik, Technische Universität Braunschweig

In this contribution we present our study of ultrathin c-plane GaInN/GaN quantum wells (QWs) grown by molecular beam epitaxy (MBE) compared to those grown by metal-organic vapor phase epitaxy (MOVPE) in terms of morphology and composition homogeneity. The ternary semiconductor GaInN has many opportunities for applications as optoelectronic device with its direct band gap tunable between 0.65 eV for InN and 3.42 eV for GaN. For large scale production of devices with GaInN/GaN QWs MOVPE is the fabrication process of choice nowadays. But due to the high operating temperatures of the MOVPE which are needed to break the ammonia bonds for nitrogen supply, MOVPE grown GaInN layers have a tendency to form indium clusters on the growth surface which cause an inhomogeneity of the composition. In contrast to that, growth temperatures used by MBE can be much lower which reduces the diffusion length of indium and therefore MBE grown layers should have a more homogeneous composition and very high indium concentrations can be more easily realized. In which extend the structural and optical properties of GaInN/GaN QWs differ by the named growth methods is the topic of our investigation and gives more insight into the growth process.