Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.9: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

Capacitance spectroscopy on GaN quantum dots — •Peter Conrad¹, Carlo Sgroi¹, Julien Brault², Laurin Schnorr³, Andreas D. Wieck¹, and Arne Ludwig¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — ²CNRS-CRHEA, Rue Bernard Grégory, 06560 Valbonne, France — ³Lehrstuhl für Festkörperphysik, Heinrich-Heine-Universität Düsseldorf, D-40204 Düsseldorf, Germany

The aim of this work is to gain insights in the tunnel behaviour of charge carriers in self-assembled GaN quantum dots by means of different measurement methods. Based on previous capacitance-voltage measurements (CV measurements) on GaN quantum dots, CV measurements under illumination will be performed in this thesis [1]. On the basis of these measurements we will try to characterize defects in the sample more precisely. In addition, the CV measurement under illumination can be carried out as a function of the temperature in order to gain further information about their thermal activation energy. Another method to be used to investigate electrically active defects is the Deep Level Transient Spectroscopy (DLTS). With the help of the signals obtained by the DLTS measurement, it is possible to determine the activation energy at the GaN quantum dot interface.

[1] Labud et al.: Physical Review Letters 112 (4), 046803