Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 36: II-VI- and III-V-semiconductors
HL 36.10: Talk
Thursday, April 4, 2019, 12:00–12:15, H31
1D photonic bandgap structures for high-power GaN/InGaN laser devices — •Prabha Sana1, Christoph Berger1, Marc Peter Schmidt2, Gordon Schmidt1, Armin Dadgar1, Jürgen Bläsing1, Martin Deckert2, Hartmut Witte1, Jürgen Christen1, and André Strittmatter1 — 1Institut für Physik, Otto-von-Guericke Universität, Universitätsplatz 2, 39106 Magdeburg, Germany — 2Fakultät für Elektrotechnik und Informationstechnik, Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
Work reports the development of InGaN/GaN edge emitting laser with single mode 400-460 nm emission using the concept of photonic band gap crystals (PBC) to achieve vertical fundamental mode operation up to maximum power injection and reduction in vertical far field divergence. The laser structure consists of three InGaN/GaN quantum wells (QWs) as active region grown on a PBC superlattice of 35-pairs of lattice-matched GaN (220 nm)/InAlN (30 nm). The PBC periodically modulates the refractive index in the lower n-doped waveguide section, which helps to discriminate the higher order modes to obtain single mode lasing action. Basic PBC optimization parameters i.e. number of PBC pairs and layer thicknesses are obtained by CAMFR simulation. Investigations on doping of the PBC with Si or Ge were performed in order to achieve low optical losses and reduce the series resistance. Furthermore, the InGaN/GaN multi quantum well region and design of the Mg-doped AlGaN electron blocking layer were studied to achieve a reduced penetration of the optical mode into the p-doped cladding.