Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: Focus Session: Growth, Properties and Application of Epitaxial Graphene (joint session DS/HL/O)
HL 37.5: Vortrag
Donnerstag, 4. April 2019, 10:45–11:00, H32
Substrate induced nanoscale resistance variation in epitaxial graphene — •Anna Sinterhauf1, Georg A. Traeger1, Davood Momeni Pakdehi2, Philip Schädlich3, Florian Speck3, Philip Willke4, 5, Thomas Seyller3, Christoph Tegenkamp3, Klaus Pierz2, Hans Werner Schumacher2, and Martin Wenderoth1 — 1IV. Physikalisches Institut, Universität Göttingen, 37077 Göttingen, Germany — 2Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany — 3Institut für Physik, Technische Universität Chemnitz, 09126 Chemnitz, Germany — 4Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul 03760, Republic of Korea — 5Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
Electron transport in graphene is often crucially influenced by the underlying substrate which induces scattering mechanisms on a local scale. Using scanning tunneling potentiometry we investigate the transport properties of graphene on 6H-silicon carbide (0001) grown by polymer-assisted sublimation growth (PASG) down to the nanometer scale. We find a significant variation in the sheet resistance of up to 195% on neighboring terraces directly related to the stacking of the 6H-SiC substrate. Thus, our data clearly shows the strong influence of the substrate below the graphene layer on its local transport properties. In addition, we performed temperature dependent measurements to gain insight into the dominant scattering mechanism. This work is financially supported by the DFG through the SFB1073.