Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 38: Organic semiconductors

HL 38.2: Vortrag

Donnerstag, 4. April 2019, 09:45–10:00, H33

Fabrication and electrical properties of Rubrene/F6-TCNNQ charge transfer interfaces — •Bipasha Debnath, Daniel Waas, Martin Knupfer, Bernd Büchner, and Yulia Krupskaya — Leibniz Institute for Solid State and Materials Research Dresden, 01069 Dresden Germany

Although charge-transfer interfaces are widely used in organic electronics, the mechanism of the charge transfer remains unexplored. One of the very promising approaches to study the charge transfer is organic single-crystal based interfaces, where an enhanced electrical conductivity at the interface of two initially insulating materials can be observed [1]. In this research work, we build a charge-transfer interface based on high quality Rubrene single crystals as a donor material. As an acceptor, we choose F6-TCNNQ -a molecule with very high electron affinity (EA = 5.6 eV) [2]. Rubrene single crystals are grown using physical vapor transport (PVT) and characterized with the optical and atomic force microscopy. Additionally, field-effect transistor (FET) measurements are performed to ensure the highest quality of the crystals. To fabricate the charge-transfer interface, F6-TCNNQ is evaporated on top of the Rubrene crystals. Strongly increased electrical conductivity along the interface is observed by electrical measurement. The acquired results well complement the previous studies of Rubrene/Fx-TCNQ interfaces [1] and widen the possibility for further systematic investigations of the charge transfer mechanisms. Financial support: DFG KR 4364/4-1. [1] Y. Krupskaya et al., Adv. Funct. Mater. 26, 2334 (2016) [2] A. Kahn et al., Adv. Funct. Mater. 28, 1703780 (2018)