Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 41: Heterostructures, interfaces, and surfaces

HL 41.2: Talk

Thursday, April 4, 2019, 15:15–15:30, H31

Orientation of antiphase boundaries in GaP on Si(001) — •Pascal Farin, Mario Dähne, Holger Eisele, and Andrea Lenz — TU Berlin, Berlin, Deutschland

Monolithic integration of III-V semiconductors on Si would dramatically lower the cost of optoelectronic devices as well as improve their performance. Due to its small lattice mismatch with Si, GaP is particularly suited. However, locally charged defects called antiphase boundaries strongly deteriorate the optoelectronic device performance. While growth conditions that limit the antiphase-domain size and density have already been found, the exact crystalline orientation of the two-dimensional antiphase boundaries remains unclear. Their orientation is related to the net doping introduced into the crystal.

In this work, antiphase boundaries are investigated in detail by means of cross-sectional scanning tunneling microscopy (XSTM) on two perpendicular cleavage surfaces of the same sample. It is shown, how it is thereby possible to determine the exact orientation of the antiphase boundaries and their shares of the entire antiphase domain surface in order to finally estimate the net doping caused by the antiphase boundaries.

We thank Prof. K. Volz et al. for providing the sample and we acknowledge support by the DFG, project LE 3317/1-2.