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HL: Fachverband Halbleiterphysik
HL 41: Heterostructures, interfaces, and surfaces
HL 41.5: Vortrag
Donnerstag, 4. April 2019, 16:00–16:15, H31
In-Situ Patterning of IBC SHJ Solar Cells with Efficiencies Exceeding 20 % — •Philipp Wagner1,2, Dimitri Belostotski1, Johann-Christoph Stang1, Bernd Stannowski3, Bert Stegemann2, and Lars Korte1 — 1HZB, Institute Silicon Photovoltaics, Kekuléstraße 5, D-12489 Berlin — 2HTW Berlin, Wilhelminenhofstraße 75a, D-12459 Berlin — 3HZB, Institute PVcomB, Schwarzschildstraße 3, D-12489 Berlin
Silicon represents the predominant material for solar cell fabrication owing to its excellent electrical properties and abundance. Its predicted theoretical efficiency potential is 29.4 % [1]. Within Silicon-based technologies, the interdigitated back contacted silicon heterojunction (IBC SHJ) solar cell represents the recently most successful approach with an efficiency record of 26.7 %[2], almost entirely exploiting the abovementioned potential. However, hitherto established contact preparation of such solar cells by photolithography is elaborate, time-consuming, and cost-intensive, rendering their implementation in industrially fabrication challenging. Here, we report on our recent progress in developing an easy and potentially industrially viable fabrication process for IBC SHJ solar cells using in-situ shadow masks during PECVD, yielding efficiencies exceeding 20 %. Detailed device characterisation as well as strategies to further improve passivation quality and reduce resistive losses are presented to close the yet present performance gap between these devices and their photolithography-based counterpart.
[1] A. Richter et al. IEEE J. Photovoltaics 3(4), 1184-1191 (2013).
[2] M. A. Green et al. Prog. Photovolt. Res. Appl. 25, 668-676 (2017).