HL 42: Quantum dots and wires: Preparation and characterization
Donnerstag, 4. April 2019, 15:00–17:15, H34
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15:00 |
HL 42.1 |
Monolithic co-integration of III-V-based structures on silicon using multiple step relaxation technique — •Ramasubramanian Balasubramanian, Vitalii Sichkovskyi, Gadi Eisenstein, and Johann Peter Reithmaier
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15:15 |
HL 42.2 |
GaAs based quantum dot structures for VECSEL and MIXSEL applications — •Tanja Finke, Vitalii Sichkovskyi, Cesare Alfieri, Léonard Krüger, Jacob Nürnberg, Matthias Golling, Ursula Keller Keller, and Johann Peter Reithmaier
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15:30 |
HL 42.3 |
Tuning the emission energy of self-assembled low density In(Ga)As quantum dots — •Timo Langer, Nandlal Sharma, and Dirk Reuter
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15:45 |
HL 42.4 |
Temperature controlled phase transition in single Ag2Se nanowires — •Maximilian Schwarz, August Dorn, and Alf Mews
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16:00 |
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15 min. break
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16:15 |
HL 42.5 |
Heterointegration of III-V materials on silicon substrates using quantum dot strain relaxation layers — •Cedric Corley, Vitalii Sichkovskyi, and Johann Peter Reithmaier
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16:30 |
HL 42.6 |
Multi-probe electrical characterization of axial pn-junction in GaAs nanowires — •Andreas Nägelein, Juliane Koch, Cornelia Timm, Matthias Steidl, Peter Kleinschmidt, and Thomas Hannappel
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16:45 |
HL 42.7 |
The contribution has been moved to HL 45.68.
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17:00 |
HL 42.8 |
Quantum dot-microlenses and -mesas for single-photon sources operating at telecom wavelength — •Nicole Srocka, Jan Große, Pawel Mrowinski, Anna Musial, David Quandt, André Strittmatter, Grzegorz Sek, Sven Rodt, and Stephan Reitzenstein
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