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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.12: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Investigating the damaging effect of GCIB etching during XPS/UPS depth profiling on perovskite considering temperature dependence — •Joshua Kreß and Yana Vaynzof — Universität Heidelberg

In order to properly evaluate gas cluster ion beam (GCIB) etching studies it is important to understand the physical processes taking place in the layer. Our studies focus on the effect of argon cluster beams on various perovskite layers, especially taking into account substrate temperature dependence, in order to identify the ideal cluster etching conditions. The composition and energetics of the layers can be measured in situ, directly after etching via x-ray (ultraviolet) photoelectron spectroscopy (XPS/UPS). Additional studies of morphology (SEM), optical properties (UV-VIS, PDS) or vibronic properties (FTIR) have been performed.