Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Two-dimensional Materials IV (joint session HL/CPP)

HL 48.10: Talk

Friday, April 5, 2019, 12:00–12:15, H36

Strain-induced localization of interlayer excitons in a van-der-Waals heterostructure — Malte Kremser, •Moritz Meyer, Janine Gückelhorn, Kai Müller, and Jonathan Finley — Walter Schottky Institut, Technische Universität München, München, Deutschland

The intricate potential landscape of interlayer excitons (IX) in heterobilayers (HBLs) of transition metal dichalcogenides is currently undergoing intense study. [1, 2] We show that strain can be utilized to locally modify the IX potential resulting in locally trapped states, similar to the strain-related emergence of quantum emitters in monolayer WSe2. [3, 4]

We locally strain a HBL composed of MoSe2 and WSe2 by placing it on top of lithographically defined nanopillars. The strain at the nanopillar positions creates localized states that appear as new peaks in low-temperature photoluminescence (PL) measurements, red-shifted by ~50-100 meV with respect to the IX main emission. We show that in excitation-power-dependent measurements the emission features a series of discrete peaks that suggests sequential charging of the trapping potential with multiple IXs.

[1] K. Tran et al., arXiv 1807.03771

[2] K. L. Seyler et al., arXiv 1809.04562

[3] A. Branny et al., Nat. Commun. 8, 15053 (2017)

[4] C. Palacios-Berraquero et al., Nat. Commun. 8, 15093 (2017)