Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 8: Transport and theory of electronic structure
HL 8.1: Talk
Monday, April 1, 2019, 15:00–15:15, H33
Anomalous microwave-induced resistance oscillations in double quantum well hetero-structures — •Jana Meyer1, Jan Scharnetzky2, Maik Hauser3, Werner Dietsche3, Werner Wegschneider2, Lars Tiemann1, and Robert H. Blick1 — 1Center for Hybrid Nanostructures, Hamburg University, 22761 Hamburg, Germany — 2ETH Zürich, 8092 Zürich, Switzerland — 3Max-Planck-Institute for Solid State Research, 70569 Stuttgart, Germany
Gallium arsenide double quantum well systems with various barrier thicknesses were exposed to microwave radiation at low temperatures and large magnetic fields. The double quantum well Hall bar samples employ structured top and back gates to control the electron densities and to electrically separate the two quantum wells.[1] At specific microwave frequencies and carrier densities, pronounced anharmonic oscillations in the longitudinal resistance emerge, which exhibit nodes at certain Landau level filling factors. The amplitude of these oscillations is very sensitive to the microwave power and variations of the carrier density. We propose this phenomenon to originate from plasmonic excitations.
[1] J. P. Eisenstein et al., Appl. Phys. Lett. 57, 2324 (1990).