Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Focus Session: Oxide Semiconductors for Novel Devices II

Monday, April 1, 2019, 15:00–17:30, H34

Organizers: Holger Eisele (TU Berlin) and Holger von Wenckstern (Uni Leipzig)

	15:00	HL 9.1	Tin-assisted PLD-growth of epitaxial κ-Ga2O3 thin films — •M. Kneiss, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, T. Schultz, N. Koch, and M. Grundmann
	15:15	HL 9.2	Effective electron mass anisotropy in α-Ga2O3 — •Martin Feneberg, Jürgen Bläsing, Rüdiger Goldhahn, and Kazuaki Akaiwa
	15:30	HL 9.3	Transport Properties and Finite Size Effects in β-Ga2O3 Thin Films — •Robin Ahrling, Johannes Boy, Martin Handwerg, Olivio Chiatti, Rüdiger Mitdank, Zbigniew Galazka, Günter Wagner, and Saskia F. Fischer
	15:45	HL 9.4	Properties of the β-Ga2O3(1 0 0) surface — •Jonathan K. Hofmann, Celina S. Schulze, Wjatscheslav Martyanov, Martin Franz, Zbigniew Galazka, and Holger Eisele
	16:00	HL 9.5	Low-frequency noise characterization of MOCVD-grown β-Gallium Oxide — •Christian Golz, Günther Wagner, Andreas Popp, Fariba Hatami, and W. Ted Masselink
	16:15	HL 9.6	Ion beam Doped Transparent Conductive Oxides for Metasurfaces — •Alexander Koch, Jura Rensberg, Martin Hafermann, and Carsten Ronning
	16:30	HL 9.7	Phase transitions in Zn2GeO4: Insights from first-principles calculations — •Daniel Fritsch, Joachim Breternitz, and Susan Schorr
	16:45	HL 9.8	A theoretical study of Electronic and Optical Properties of Mercaptocarboxylic Acids on ZnO Surfaces — •Michael Lorke, Dennis Franke, Andreia daRosa, and Thomas Frauenheim
	17:00	HL 9.9	Thermodynamics and electronic structure of low-index β-Ga2O3 surfaces — •Konstantin Lion, Sergey V. Levchenko, Matthias Scheffler, and Claudia Draxl
	17:15	HL 9.10	The contribution has been withdrawn.