Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 10: Ferroics - Domains and Domain Walls

KFM 10.7: Vortrag

Dienstag, 2. April 2019, 11:35–11:50, H47

Electric-field poling of an improper ferroelectric — Alexander Ruff¹, Jakob Schaab², Manfred Fiebig², Dennis Meier³, and •Stephan Krohns¹ — ¹Experimental Physics V, Center for Electronic Correlation and Magnetism, University of Augsburg, Augsburg 86159, Germany — ²Department of Materials, ETH Zurich, 8093 Zurich, Switzerland — ³Department of Materials Science and Engineering, Norwegian University of Science and Technology

Manipulation of domains within ferroelectric semiconductors has attracted attention in recent years for potentially allowing domains and domain walls to be used as functional elements in nanoelectronics. Hexagonal manganites have shown particular potential because of their unusual, improper ferroelectric properties. Here, we provide an electric-field poling study of h-ErMnO₃. From a detailed dielectric analysis [1], we deduce the temperature- and frequency-dependent range for which single-crystalline h-ErMnO₃ exhibits purely intrinsic dielectric behavior [2]. In this temperature range, the ferroelectric switching kinetics, which is mainly driven by domain-wall motion, is investigated without superimposing extrinsic contributions. Controlling the domain walls via electric fields will bring us an important step closer to their utilization in domain-wall-based electronics [3].

[1] E. Ruff et al., Phys. Rev. Lett. 118, 036803 (2017).

[2] A. Ruff et al., Appl. Phys. Lett. 112, 182908 (2018).

[3] J. Schaab et al., Nature Nanotechnology, 13, 1028 (2018).