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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 16: Multiferroics and Magnetoelectric coupling II (joint session MA/KFM)

KFM 16.4: Vortrag

Freitag, 5. April 2019, 10:15–10:30, H39

Artificial multiferroic domain walls in oxide heterostructures — •Elzbieta Gradauskaite, Manfred Fiebig, and Morgan Trassin — Department of Materials, ETH Zurich, Switzerland

Ferroelectric domain walls possess symmetry-dependent functional properties enabled by confinement. Enhanced conductivity, for instance, is observed in charged domain walls. Regrettably, domain walls of this type are very scarce in nature due to energetically unfavourable electrostatics, which hinders technological development of domain wall nanoelectronics. We propose ferroic thin film oxide interfaces as an alternative. The polar state of BaTiO₃ and BiFeO₃ ferroelectrics can be manipulated via atomically precise surface termination control and monitored with in-situ second harmonic generation (ISHG) during the growth. Using this approach, stable head-to-head and tail-to-tail polarization-oriented configurations of ferroelectric layers can be created. Their interfaces are charged and can be regarded as artificial domain walls. By inserting an ultrathin La_1−xSr_xMnO₃ ferromagnetic film at the junction we design a magnetoelectric multiferroic interface. Using a combination of ISHG and SQUID magnetometry, we show that the interlayer magnetic moment can be enhanced or diminished when the artificial domain wall has a head-to-head or tail-to-tail configuration, respectively. Our work provides new insights into electrical control of magnetism in multiferroic oxide heterostructures.