Regensburg 2019 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Magnetism Poster A

MA 15.82: Poster

Tuesday, April 2, 2019, 10:00–13:00, Poster E

Investigation of tunneling anisotropic magnetoresistance (TAMR) in fully epitaxial oxide stacks — •Kevin Lancaster¹, Camillo Ballani¹, Christoph Hauser¹, Philip Trempler¹, and Georg Schmidt^1,2 — ¹Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle (Saale), Germany — ²Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg 06120 Halle (Saale), Germany

Tunneling anisotropic magnetoresistance (TAMR) [1] can appear in stacks with a single crystalline ferromagnetic electrode, a tunnel barrier and a non-magnetic counter electrode. Especially for fully epitaxial stacks an increase in magnetoresistance is expected because of increased k-parallel conservation. More complex effects may appear when a ferroelectric tunnel barrier is used. We present an optimization for the thin film pulsed laser deposition of SrTiO₃ and BaTiO₃ tunnel barriers on La_0,7Sr_0,3MnO₃ for (001)-oriented SrTiO₃ substrates. After deposition the layer stacks were processed by means of lithography, etching and electron beam evaporation. Besides structural characterization we will present magnetotransport measurements done at low temperatures in a cryostat equipped with a 3D vector magnet.

[1] C. Gould, C. Ruester, G. Schmidt, L. Molenkamp: "Tunnelling Anisotropic MagnetoResistance (TAMR)", INTERMAG 2006 - IEEE International Magnetics Conference 4261550 (2006), 116

[2] J. D. Burton, Evgeny Y. Tsymbal: "Tunneling anisotropic magnetoresistance in a magnetic tunnel junction with half-metallic electrodes", Physical Review B93, 024419, 2016