Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 4: Topological insulators and spin-dependent transport phenomena
MA 4.10: Vortrag
Montag, 1. April 2019, 12:00–12:15, H52
Reconfigurable spin tunnel diode based on stacked two-dimensional materials — •Ersoy Sasioglu1, Stefan Blügel2, and Ingrid Mertig1 — 1Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) Germany — 2Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany
Tunnel diodes and transistors are considered as one of the most promising candidates for
the future high-speed, low-power nanoelectronic devices due to their predicted ultra-high
frequency operation in the THz range. Recently we proposed a reconfigurable spin tunnel
diode and transistor concept using spin gapless semiconductors (SGSs) and half metallic
magnets (HMMs) [1]. The two-terminal spin tunnel diode is comprised of a SGS electrode and a
HMM electrode separated by a thin insulating tunnel barrier and allows electrical current
to pass either in one direction or in other direction depending of the relative orientation
of the magnetization direction of the electrodes. Two-dimensional stacked van der Waals materials,
which form high-quality heterointerfaces due to absence of dangling bonds, offer a unique platform
for realization of such a spin diode concept. By employing the nonequilibrium Green’s function
method combined with density functional theory we demonstrate the reconfigurable rectification
characteristics of the spin tunnel diode based on two-dimensional stacked transition-metal
dichalcogenides and dihalides. Funding by the European Union (EFRE) is greatly acknowledged.
Ersoy Şaşioğlu and Stefan Blügel, (2017), PCT Patent No. WO 2017076763(A1).