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MM: Fachverband Metall- und Materialphysik

MM 18: Interfaces

MM 18.3: Vortrag

Dienstag, 2. April 2019, 14:45–15:00, H45

Amorphous interlayers in semiconductor metallization — •Dennis König, Efi Hadjixenophontos, Guido Schmitz, and Kevin Treder — Institute of Materials Sience, Chair of Material Physics, University of Stuttgart, Heisenbergstraße 3, 70569, Germany

Deposition of thin metallic films on monocrystalline silicon substrates has been extensively used in the past. An amorphous interlayer of few nm, between the silicon and the metallic coating is reported in such systems. During this work detailed investigation on this interlayer is done. Different parameters are studied such as: The cleaning time of the substrates, the power during deposition and the metallic element (Al, Au and Ag) in contact with the substrate. Samples are prepared by Ion beam sputtering with controlled thicknesses and are characterized by HRTEM after FIB cross sections. Further elemental analysis is done by EDX during microscopy. A clear dependency of the thickness of interlayer is observed on the cleaning time and power during deposition. Attempts to identify the composition of the amorphous interlayer are performed by Atom Probe Tomography.