Regensburg 2019 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 26: Materials for Energy Storage and Conversion
MM 26.10: Talk
Wednesday, April 3, 2019, 17:30–17:45, H43
Photo-electrochemical properties of GaNP epitaxial films grown by MOCVD — •René Couturier1, Peter Ludewig2, Wolfgang Stolz2,3, Kerstin Volz3, Sangam Chatterjee1, and Detlev M. Hofmann1 — 1Institute of Experimental Physics I, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, D-35392 Gießen, Germany — 2NAsPIII/V GmbH, Am Knechtsacker 19, D-35041 Marburg, Germany — 3Faculty of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Hans-Meerwein-Str. D-35032 Marburg, Germany
Efficient charge transfer at the semiconductor-electrolyte-interface is very crucial for photo-electrochemical applications like water splitting. A very promising material for such electrochemical applications are Ga1−xNxP semiconductor films. The films show charge-carrier injection under irradiation into the electrolyte, depending on the applied bias. Electron- and hole-transfers are achieved. The processes are investigated by wavelength dependent photocurrent measurements under applied potentials. In parallel, the emission properties of the material are investigated which dominantly show the recombination via clusters of nitrogen dopants. The results are discussed in the frame of the surface band-bending model.