Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 36: Focus Session: Designer Quantum Systems II (joint session O/TT)
O 36.5: Vortrag
Dienstag, 2. April 2019, 15:30–15:45, H15
Nonlinear optical Hall effect in BC2N — •Julen Ibañez-Azpiroz1, Ivo Souza1,2, and Fernando de Juan2,3 — 1Materials Physics Center, CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Spain — 2Ikerbasque Foundation, 48013 Bilbao, Spain — 3Donostia International Physics Center (DIPC), 20018 Donostia, Spain
The bulk photovoltaic effect is a nonlinear optical response that yields a net photocurrent in noncentrosymmetric crystals. Its interband contribution under linearly polarized light, known as the shift current, involves a subtle Berry-phase-like quantity that makes this effect very sensitive to wavefunction properties. Here we show that the relative parity of valence and conduction bands under mirror reflection determines whether the shift current flows parallel or perpendendicular to the applied electric field. The former situation is realized in GeS and similar monolayers [1,2] while the later, which corresponds to a nonlinear optical Hall effect, is far less common. Based on a recently developed ab-initio method [3], we show that this novel effect is realized in layer-structured graphitic BC2N. Furthermore, our calculations reveal an enhanced shift-current absorption in the visible range, which makes BC2N a prime candidate for future experimental studies.
[1] A. Cook, B. M. Fregoso, F. de Juan et. al., Nat. Commun. 8, 14176 (2017).
[2] T. Rangel, B. M. Fregoso, B. S. Mendoza et. al., Phys. Rev. Lett. 119, 067402 (2017).
[3] J. Ibañez-Azpiroz, S. S. Tsirkin and I. Souza, Phys. Rev. B 97, 245143 (2018)