Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 66: Poster Wednesday: 2D Materials
O 66.5: Poster
Mittwoch, 3. April 2019, 17:45–20:00, Poster B2
Characterisation of MoS2 and WS2 demonstrating a general approach for the synthesis of two-dimensional binary compounds — •Ann Julie Holt1, Raluca Maria Stan1, Marco Bianchi1, Abhay Shivayogimath2, Philip Hofmann1, and Timothy Booth2 — 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark — 2DTU Nanotech, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
The synthesis of many two-dimensional materials is now scalable through different chemical vapor deposition (CVD) techniques. However, the crystal quality resulting from these methods is very sensitive to growth parameters and the details of the procedure are highly material-dependent. A significant amount of effort needs to be invested for the synthesis of each individual material, and the development of a general growth method would therefore be of great interest.
Here, we present an experimental study of two-dimensional single layer MoS2 and WS2 obtained from a general synthesis method developed for two-dimensional binary compounds. Structural and electronic characterization is performed by scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle-resolved photoelectron spectroscopy (ARPES), showing high quality single-layer growth. These results serve as a proof of principle of a simple strategy for growing atomically thin binary compounds, which may greatly simplify the fabrication of already established and future two dimensional materials.