Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 69: Poster Wednesday: Organic Molecules on Inorganic Surfaces
O 69.9: Poster
Mittwoch, 3. April 2019, 17:45–20:00, Poster B2
Surface characterization of en-APTAS monolayers on n-GaN(0001) — •nurhalis majid1,3, gerhard lilienkamp1, nursidik yulianto2,3, hutomo s. wasisto2, and winfried daum1 — 1IEPT, TU Clausthal, Clausthal-Zellerfeld, Germany — 2IHT, TU Braunschweig, Braunschweig, Germany — 3Research Centre for Physics, LIPI, Tangerang Selatan, Indonesia
Surface functionalization of metal oxide semiconductors with N-[3-(trimetoxylsilyl)propyl]ethylenediamine (en-APTAS) self assembled monolayers provides a viable route for the development of selective NO2 gas sensors. A similar functionalization of GaN surfaces could allow for the development of nanoscale NO2 gas sensors. Here, we investigate properties of en-APTAS monolayers, prepared by dip coating on n-GaN(0001), by AFM, AES and XPS. The adsorption of en-APTAS is characterized by the SiLVV and SiKLL Auger lines and N 1s photoemission with binding energies of 398.8 eV, 400 eV, and 401.6 eV associated to primary, secondary and protonated amine groups, respectively. We observe an anomaly of the SiLVV/SiKLL Auger intensity ratio for the en-APTAS monolayer which suggests that the Si atoms are located close to the top of the layer. Implications for the suitability of this organic/inorganic hybrid system for NO2 gas sensing applications are discussed.
N. Majid would like to thank the Ministry of Research, Technology and Higher Education of the Republic of Indonesia for the Ph.D. scholarship and Indonesian-German Centre for Nano and Quantum Technologies for support.