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O: Fachverband Oberflächenphysik

O 88: Electronic Structure of Surfaces II

O 88.11: Vortrag

Donnerstag, 4. April 2019, 17:30–17:45, H26

Investigation of Micro-stress at Si/SiO2 interface using Infrared spectroscopy — •Tahereh Mohammadi Hafshejani, Franz Königer, Jonas Wohlgemuth, Zhihua Fu, Meike König-edel, Matthias Schwotzer, and Peter Thissen — Karlsruhe Institute of Technology (KIT), Institute of Functional Interfaces (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

Silicon is by far the most important semiconductor material in the microelectronic industry mostly due to the high quality of the Si/SiO2 interface. The potential use of silicon in microelectronic devices highly depends on the interface thermal properties of between (SiO2/Si). In this work, we study how the SiO2 layer changes the interfacial properties and has a direct effect on Kapitza resistance, which has not been experimentally investigated so far. Also, vibrational properties of the SiO2 thin films (the optical phonon bands) and contribution between its thickness with the amount of Si-O bonds are discussed in details using a combination of the spectrometer with a new self-made device, applying bending forces on samples and simultaneously performing IR measurements. The results of impedance measurements have shown that Kapitza resistance at SiO2/Si interface depends on both the interfacial coupling strength and thickness. Moreover, combining infrared measurements and bending forces provide a deep insight into the processes at atomic level when the samples are under different stresses, reveal their association with a thickness of SiO2 as well as interface properties.