Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 95: Semiconductor Substrates: Metallic Nanowires
O 95.1: Vortrag
Freitag, 5. April 2019, 10:30–10:45, H14
Novel electronic junctions in an atomic wire array: interfaces between metallic and charge density wave ordered electronic phases — •Samad Razzaq1, Sun Kyu Song2, Han Woong Yeom3, and Stefan Wippermann4 — 1Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf,Germany — 2Center for Artificial Low D Electronic Systems, Pohang, S.Korea — 3Center for Artificial Low D Electronic Systems, Pohang, S.Korea — 4Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf,Germany
The Si(111)-(4x1)In atomic wire array is an extremely popular model for one-dimensional electronic systems. It features a reversible, temperature-induced metal insulator transition into a charge density wave (CDW) ordered ground state with (8x2) translational symmetry. Close to the phase transition temperature, both phases can coexist and form novel types of electronic junctions between the metallic (4x1) phase and the insulating CDW-ordered (8x2) phase. Combining scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio molecular dynamics calculations, we explore the microscopic structure of interfaces between distinct electronic phases at the atomic scale. Specific defects allow to modify and control the structure of these electronic interfaces. We explain the atomistic mechanism behind the junction formation and its tunability from first principles. Financial support from the German Research Foundation (DFG), grant no. FOR1700 is gratefully acknowledged.