Regensburg 2019 – scientific programme
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O: Fachverband Oberflächenphysik
O 96: Focus Session: Surface Transport at the Atomic Scale
O 96.2: Talk
Friday, April 5, 2019, 11:00–11:15, H15
Space-charge layer effects studies by surface transport — •Frederik Edler1,2, Ilio Miccoli2, Herbert Pfnür2, and Christoph Tegenkamp1,2 — 1Institut für Festkörperphysik, Technische Universität Chemnitz, 09126 Chemnitz — 2Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover
Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments, e.g., giving a direct access to instability-driven metal insulator transitions. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. We analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(111), we reliably accessed subsurface transport channels via angle- and temperature-dependent in-situ transport measurements. In particular, we show that high temperature treatments performed under even ultra high vacuum conditions lead to the formation of surface-near bulk defects, e.g. SiC interstitials. These defects act as p-type dopants and easily overcompensate pristine low dopant concentrations in Si. This effect is of high significance in low-doped Si samples.