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SYIS: Symposium Interactions and Spin in 2D Heterostructures

SYIS 1: Interactions and Spins in 2D Heterostructures

SYIS 1.2: Hauptvortrag

Donnerstag, 4. April 2019, 15:30–16:00, H1

Bilayer Graphene Quantum Devices — •Klaus Ensslin — ETH Zurich, Switzerland

We demonstrate electronic constrictions on bilayer graphene that can be completely pinched off [1]. Split-gate devices in combination with a graphite backgates enable electronic tunability of the devices. In few electron and hole quantum dots confined by p-n junctions [2] we investigate valley and spin splitting. Also many electron quantum dots with standard tunneling barriers as well as double and triple quantum dots [3] can be realized with an electronic quality comparable to the best dots fabricated in standard semiconductor environments. The level spectrum of quantum point contacts in bilayer graphene has a peculiar magnetic field dependence quite different from what is known from semiconductors. We understand the details of this spectrum [4] based on the Berry curvature in bilayer graphene. These experiments open the door for using graphene quantum dots as spin qubits with potentially long coherence times. This work was done in collaboration with H. Overweg, M. Eich. R. Pisoni, Y. Lee, P. Rickhaus, A. Kurzmann, and T. Ihn,

References

1. H. Overweg, et al. Nano Lett. 18, 553 (2018)

2. M. Eich, et al. Phys. Rev. X 8, 031023 (2018)

3. M. Eich, et al. Nano Lett. 18, 5042 (2018)

4. H. Overweg, et al. arxiv:1809.01920 , PRL in print