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TT: Fachverband Tiefe Temperaturen

TT 14: Graphene

TT 14.9: Vortrag

Montag, 1. April 2019, 17:30–17:45, H22

Gap opening and quantum transport in a functionalized Bernal graphene bilayer — Ahmed Missaoui^1,3, Jouda J. Khabthani¹, Didier Mayou², and •Guy Trambly de Laissardiere³ — ¹Laboratoire de la Physique de la Matière Condensée, Faculté des Sciences de Tunis, Université de Tunis El Manar, Tunis, Tunisia — ²Institut Néel, CNRS - Univ. Grenoble Alpes, France — ³Laboratoire de Physique théorique et Modélisation, CNRS - Univ. de Cergy-Pontoise, France

We describe numerically the electronic properties in Bernal bilayer graphene in presence of a random distribution of vacant atoms that simulate resonant adsorbates. The values of fundamental quantities such as conductivity, elastic mean free path, localization length are computed. In a Bernal graphene bilayer, carbon atoms belong to two inequivalent sub-lattices A and B of each layer. Therefore, selective functionalizations on only a sub-lattice can significantly change its electronic properties [1]. In particular, we find that for some selective functionalizations, a mobility gap of the order of 0.5 eV is formed near the Dirac energy at concentration of adatoms larger than 1
A. Missaoui et al., J. Phys. : Condens. Matter 30, 195701 (2018).