Regensburg 2019 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 16: Graphene II: Excitations and Nanoribbons (joint session O/TT)

TT 16.11: Vortrag

Montag, 1. April 2019, 17:30–17:45, H24

Expitaxially grown twisted bilayer graphene on SiC(0001) — •You-Ron Lin^{1, 2}, Nafiseh Samiseresht^{1, 2}, Markus Franke^{1, 2}, Shayan Parhizkar^{1, 2}, François C. Bocquet^{1, 2}, F. Stefan Tautz^{1, 2}, and Christian Kumpf^{1, 2} — ¹Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany — ²Jülich Aachen Research Alliance (JARA) - Fundamentals of Future Information Technology, 52425 Jülich, Germany

Layer by layer stacking of 2D-materials such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) has been widely investigated developing a field on its own [1]. It has been shown that apart from the material used for stacking, the twist angle between two layers also has an immense effect on the band structure of the stack [2]. We report a reproducible method for large scale epitaxial growth of graphene bilayers utilizing the precursor molecule borazine. The existence of both graphene layers is confirmed by angular-resolved photoemission spectroscopy (ARPES). Spot-profile analysis low electron energy diffraction (SPA-LEED) has been used to determine a twist of 30 ±0.46^∘.
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Y. Cao et al., Nature, 556, 43, 2018.