Regensburg 2019 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 17: Poster Session: Correlated Electrons 1
TT 17.25: Poster
Montag, 1. April 2019, 15:00–18:30, Poster D
Charge-carrier doping in nickelate heterostructures — •Roberto Ortiz1, Friederike Wrobel1, Fanni Misják3, Benjamin Geisler2, Katrin Fürsich1, Martin Bluschke1, Enrico Schierle4, Georg Christiani1, Gennady Logvenov1, Yi Wang1, Peter van Aken1, Bernhard Keimer1, Ute Kaiser3, Rossitza Pentcheva2, and Eva Benckiser1 — 1Max Planck Institute, Stuttgart, Germany — 2CENIDE, University Duisburg-Essen, Germany — 3University Ulm, Germany — 4Helmholtz-Zentrum, Berlin, Germany
Transition-metal oxides of the 3d series show a variety of interesting properties including robust metal-to-insulator transitions, multiferroicity and high-temperature superconductivity. One way to access these properties is to modify the charge carrier concentration by doping a particular system. In bulk materials, doping is mostly accomplished by substitution of cations, but the structural and chemical disorder generated in this way can drastically modify the electronic phase behavior and/or generate mesoscopic electronic inhomogeneities. We explore two distinctive methods of charge-carrier doping of nickelate heterostructures to investigate changes in the filling of 3d electronic states: The synthesis of LaNiO2+x - band-insulator superlattices by ex-situ layer-selective chemical reduction and the transfer of charge across metal-oxide interfaces in nickelate-cuprate hybrid structures.