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TT: Fachverband Tiefe Temperaturen

TT 17: Poster Session: Correlated Electrons 1

TT 17.29: Poster

Montag, 1. April 2019, 15:00–18:30, Poster D

Tailoring LaTiO₃ for Mottronics — •Berengar Leikert¹, Philipp Scheiderer¹, Matthias Schmitt¹, Martin Stübinger¹, Judith Gabel¹, Tien-Lin Lee², Michael Sing¹, and Ralph Claessen¹ — ¹Physikalisches Institut und Röntgen Center for Complex Materials (RCCM), Universität Würzburg, Germany — ²DIAMOND Light Source, Beamline I09, Didcot, England

3d transition metal oxides exhibit fascinating phenomena - absent in conventional semiconductors - like Mott insulating behaviour due to pronounced electron-electron interactions. The field of Mottronics dreams of harnessing the phase transition between the correlated metal and the Mott insulating phase of such strongly correlated materials for novel electronic devices.

We have recently demonstrated that the prototypical Mott insulator LaTiO₃ can undergo the band filling controlled Mott transition if it is chemically p-doped by excess oxygen during thin film growth by pulsed laser deposition. Here we report on the influence of dimensionality in the ultrathin film limit for varying doping levels by photoelectron spectroscopy, tuning the material in the generic phase diagram (correlation strength versus band filling) close to the boundary of the phase transition. Doing so the metal-insulator transition can possibly be triggered by electric field gating.