Regensburg 2019 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 17: Poster Session: Correlated Electrons 1

TT 17.6: Poster

Montag, 1. April 2019, 15:00–18:30, Poster D

Crystal growth of the valence fluctuating system EuPd₂Si₂ — •Marius Peters, Eunhyung Cho, Doan-My Tran, Franz Ritter, Kristin Kliemt, and Cornelius Krellner — Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt/Main, Germany

The study of collective phenomena raising from enhanced coupling between electrons and phonons is focussed on materials exhibiting phase transitions involving both electronic and lattice-degrees of freedom. One system providing such a strongly coupled phase transition is EuPd₂Si₂ of the ThCr₂Si₂ structural type, showing a temperature induced valence transition of europium between the energetically vicinal valence states Eu²⁺ and Eu³⁺ at about 170K [1]. First reports on the synthesis of single crystals came up only recently [2], but a deep investigation of the valence transition in this compound is still missing. We approached the ternary Eu-Pd-Si system using differential thermal analysis to map the local composition phase diagram. We used the Bridgman and the Czochralski method fort he successful growth of mm-sized single crystals of EuPd₂Si₂. In this contribution we will present chemical and structural characterization of these crystals and some preliminary physical measurements around the valence transition.
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