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TT: Fachverband Tiefe Temperaturen
TT 3: Topological Insulators (joint session TT/MA)
TT 3.7: Vortrag
Montag, 1. April 2019, 11:00–11:15, Theater
Towards Topological Quasi-Freestanding Stanene via Substrate Engineering — •Philipp Eck1, Domenico Di Sante1, Maximilian Bauernfeind2, Marius Will2, Ronny Thomale1, Jörg Schäfer2, Ralph Claessen2, and Giorgio Sangiovanni1 — 1Institut für Theoretische Physik und Astrophysik, Universität Würzburg, D-97074 Würzburg — 2Physikalisches Institut and Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg
Although two-dimensional (2D) Kane-Mele-type group-IV (C-, Si-, Ge-, Sn-) honeycomb lattices have been successfully grown on a vast number of substrates, strain, deformation and/or hybridization often destroy their topological properties. Utilizing heavy atoms (Sn, Pb) increases the SOC strength and stabilizes the non-trivial phase but comes at the prize of low-buckled structurally unstable monolayers.
Here we present a systematic density functional study of stanene (Sn) on group-III and -V adatom buffered SiC(0001) and shed light on the buffer-stanene interaction physics by investigating the impact of covalent and Van-der-Waals-type bonding on the topological phase of stanene and its structural stability. We find for some buffer layers weakly interacting configurations which preserve the freestanding stanene geometry and its non-trivial phase while rendering the low-buckled structure stable. The theoretical study is supported by experimental data on an Al buffer.
D. Di Sante et al., arXiv:1807.09006