Regensburg 2019 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 39: Focus Session: Direct-Write Nanofabrication and Applications I
(Electron Beam Induced Processing) (joint session DS/TT)

TT 39.7: Invited Talk

Wednesday, April 3, 2019, 11:30–12:00, H32

Resist-free fabrication of graphene devices using focused ion beam patterning and direct-write ALD — •Ageeth Bol — Eindhoven University of Technology, Eindhoven, the Netherlands

Graphene has long been proposed as ideal candidates to replace silicon in future nanoelectronic devices and has therefore attracted considerable attention from the scientific community. Regardless, graphene struggles to leave the lab as many challenges for large-scale integration still exist. This presentation addresses one of these challenges: the resist-free fabrication of graphene devices. For the fabrication of graphene devices, graphene sheets must be patterned into individual devices, and then contacted to form electrical connections. The conventional approach involves lithography using resist films. To avoid contamination by resist residues as much as possible, a direct patterning and contacting approach was developed. We showed that a focused ion beam (FIB) is able to directly etch graphene from a substrate. By optimizing the pressure as well as reducing the amount of ions used, ion scattering could be minimized, making FIB patterning a feasible alternative to conventional lithography. Next, the FIB-patterned graphene was used to fabricate and characterize electrical devices. For the first time, Pt contacts were deposited by using a combination of electron-beam induced deposition and area-selective Pt which further avoids the use of resist films. The ALD-contacted devices show remarkable improvements compared to conventionally deposited Pt contacts.