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TT: Fachverband Tiefe Temperaturen

TT 39: Focus Session: Direct-Write Nanofabrication and Applications I
(Electron Beam Induced Processing) (joint session DS/TT)

TT 39.9: Vortrag

Mittwoch, 3. April 2019, 12:15–12:30, H32

Towards all-metallic nano-structures using FEBID and ALD — •Peter Gruszka and Michael Huth — Goethe Universität, Frankfurt am Main, Deutschland

In recent years, conventional methods of nano-structuring are slowly reaching their lower limits. A novel bottom-up and maskless approach emerged[1], which combines focused electron beam induced deposition (FEBID) and area-selective atomic layer deposition (AS-ALD).FEBID is a serial, bottom-up and direct-write technique yielding structures with superior lateral resolution (< 10 nm), but with poor material quality. In contrast, ALD and especially AS-ALD are parallel bottom-up approaches with exceptional thickness control in the sub-nm regime resulting in high purity films.

We successfully performed the AS-ALD process in our custom ALD micro-reactor on ultra-thin platinum seed layers prepared in a Nova 600 Dual Beam scanning electron microscope by FEBID. The seed layers were purified with a technique developed by Sachser et al.[2]. Additionally, we monitored the AS-ALD process via in-situ conductance measurements which enabled us to tune the resistance to a desired value. Low-temperature measurements on standard four-probe structure show metallic behaviour with an RRR of about 2.6 and a Debye temperature of about 230K. First results on high-resolution nanostructure fabrication by FEBID/AS-ALD and their low-temperature transport characteristics are presented.

[1] Mackus, et al., J. Appl. Phys 107 (2010), 116102

[2] Sachser, et al., ACS Appl. Mater. Interfaces 6 (2014), 15868