Regensburg 2019 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

TT: Fachverband Tiefe Temperaturen

TT 46: Quantum Dots, Quantum Wires, Point Contacts

TT 46.14: Talk

Wednesday, April 3, 2019, 18:30–18:45, H22

Coexistence of superconductivity and quantum Hall states in InSb Nanosheets — •Ning Kang — Department of Electronics, Peking University, China

Hybrid superconducting devices based on high-mobility two-dimensional electron gases with strong spin-orbit coupling are considered to offer a flexible and scalable platform for topological quantum computation. Here, we report the realization and electrical characterization of hybrid devices based on high-quality InSb nanosheets and superconducting Nb electrodes. The high critical magnetic field of Nb combined with high-mobility InSb nanosheets allows us to exploit the transport properties in the exotic regime where the superconducting proximity effect coexists with quantum Hall effect. Transport spectroscopy measurements in such a regime reveal an enhancement of the conductance at the quantum Hall plateaus, accompanied by a pronounced zero-bias peak in the differential conductance. We discuss that these features originate from the formation of Andreev edge states at the superconductor-InSb nanosheet interface in the quantum Hall regime.