Regensburg 2019 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 61: Topology and Symmetry-Protected Materials (joint session O/MA/TT)
TT 61.6: Vortrag
Donnerstag, 4. April 2019, 16:30–16:45, H24
Structure and electronic properties of antimonene layers on Bi2Se3 interfaces — •Kris Holtgrewe1, Conor Hogan2, and Simone Sanna1 — 1University of Giessen, Germany — 2CNR-ISM, Rome, Italy
Topological insulators (TI) exhibit unconventional physical effects that have attracted the interest of the scientific community, especially when coupled to trivial insulators. A topologically insulating Bi2Se3 substrate covered by the trivial insulator antimonene, is an ideal testbed to study the interfacial phenomena [1], and is furthermore interesting for applications such as topological pn-junctions [2].
Much research effort has been dedicated to surface preparation [3], recording of STM and ARPES images, as well as band structure calculations. However, the Sb-coverage dependent spin texture (e. g. position of Dirac states, Rashba splitting) is still not fully understood. Our work is dedicated to the theoretical investigation of the relationships between structural motifs, band structures and STM pattern. Thereby we show that including both spin-orbit coupling and van-der-Waals interaction in our density functional theory based approach is crucial for the correct modelling of the system.
[1] K. Jin et al, Phys Rev B 93, 075308 (2016)
[2] S. Kim et al., ACS Nano 11, 9671 (2017)
[3] R. Flammini, S. Colonna, C. Hogan, S. K. Mahatha, M. Papagno, A. Barla, P. M. Sheverdyaeva, P. Moras, Z. S. Aliev, M. B. Babanly, E. V. Chulkov, C. Carbone, and F. Ronci, Nanotechnology 29, 065704 (2018)