Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 61: Topology and Symmetry-Protected Materials (joint session O/MA/TT)
TT 61.8: Vortrag
Donnerstag, 4. April 2019, 17:15–17:30, H24
Bulk and Surface Electronic Structure of the Weyl-Semimetals TaP and TaAs — •Tim Figgemeier1, Chul-Hee Min1, Phillip Eck2, Jennifer Neu3, Maximilian Uenzelmann1, Domenico Di Sante2, Theo M. Siegrist3,4, Giorgio Sangiovanni2, Hendrik Bentmann1, and Friedrich Reinert1 — 1Experimentelle Physik VII, Universitaet Wuerzburg — 2Theoretische Physik I, Universitaet Wuerzburg — 3National High Magnetic Field Laboratory, Tallahassee, Florida — 4College of Engineering, FAMU-FSU, Tallahassee, Florida
Tantalum Arsenide (TaAs) and Tantalum Phosphide (TaP) are prototypical Weyl-Semimetals. We examine the electronic band structure using Angle-Resolved Photoemission Spectroscopy over a broad range of excitation energies from the VUV to the Soft X-Ray regime. With this high flexibility in photon energies, we are able to analyse the entire complex band structure of TaP in detail. In particular the surface states and the bulk band structure are identified at different photon energies and compared to first principles DFT calculations. By use of linear polarized light, we disentangle the orbital character of the Fermi arcs and other electronic states in the Fermi surface along with their connection to the bulk band structure [1].
[1] Min et al., "Orbital Fingerprint of Topological Fermi Arcs in a Weyl Semimetal", arXiv:1803.03977 (2018)