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TUT: Tutorials

TUT 3: Resistive Switching: From basic physics of memristive devices to neuromorphic systems (joint session HL/TUT)

TUT 3.1: Tutorium

Sonntag, 31. März 2019, 16:00–16:45, H4

Oxide based memristive devices: Current status of understanding and future prospects — •Regina Dittmann — PGI-7, Forschungszentrum Jülich GmbH

Transition metal oxides exhibit a reversible, non-volatile change in electrical resistance upon electrical stimulus, a phenomenon known as resistive switching. In the simplest case resistive switching memory cells, or so called memristive devices, can be switched between a low resistance state (LRS) and a high resistance states (HRS) which can be interpreted as the logical "1" and "0", respectively. Moreover, resistive switching cells often exhibit multiple resistive states rather than only two logical states, which can be highly interesting for neuromorphic applications. Based on the current knowledge, resistive switching in memristive elements based on transition metal oxides can be ascribed to electrically induced redox-processes at the oxide/electrode interface, which occur either in a spatially confined switching filament, multiple filaments or in a spatially homogeneous, area-dependent manner. In most cases, the redox-process in the metal-oxide goes along with a change in the valence state of the metal ion modifying the Schottky barrier at the oxide/electrode interface. Therefore, this type of switching mechanism is also called valence change mechanism (VCM). In this tutorial, we will present the current knowledge about microscopic mechanisms which drive electroforming and resistive switching in different variants of VCM-type memristive elements. Afterwards, a brief overview about the current and future fields of application will be presented.