Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
4364 Ergebnisse auf 437 Seiten: 1 … 156 157 158 159 160 … 437
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Mi, 11:15 | HL 24.7 | Optical properties of homoepitaxial AlGaN/GaN MQWs — •Markus Schleuning, Markus Wagner, Benjamin Damilano, and Axel Hoffmann |
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Mi, 11:30 | HL 24.8 | Effect of optimized GaN underlayers on the radiative efficiency of GaInN/GaN quantum wells — •Philipp Horenburg, Philipp Henning, Savutjan Sidik, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter |
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Mi, 11:45 | HL 24.9 | Reactive pulsed sputtering of AlN and GaN — •Florian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter |
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Mi, 12:00 | HL 24.10 | Influence of Electron Beam Irradiation on the Emission Spectra of InGaN/GaN MQWs — •Hendrik Spende, Johannes Ledig, Christoph Margenfeld, Hergo-Heinrich Wehmann, and Andreas Waag |
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Mi, 12:15 | HL 24.11 | Thermal activation of non-radiative recombination processes in III-nitride quantum wells — •Philipp Henning, Torsten Langer, Fedor Alexej Ketzer, Silvia Müllner, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter |
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Mi, 12:30 | HL 24.12 | Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM — •Yuhan Wang, Lei Zhang, Verena Portz, Michael Schnedler, Lei Jin, Xiaopeng Hao, Holger Eisele, Rafal E. Dunin-Borkowski, and Philipp Ebert |
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Mi, 12:45 | HL 24.13 | Electron affinity and surface states of GaN m-plane facets: Implication for electronic self-passivation — Verena Portz, Michael Schnedler, Holger Eisele, Rafal E. Dunin-Borkowski, and •Philipp Ebert |
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Mi, 09:30 | HL 25.1 | Room-temperature coherent electrical readout of silicon vacancy defect spins in silicon carbide — •Matthias Niethammer, Matthias Widmann, Torsten Rendler, Naoya Morioka, Yu-Chen Chen, Rainer Stöhr, Jawad Ul Hassan, Sang-Yun Lee, Amlan Mukherjee, Junichi Isoya, Nguyen Tien-Son, and Jörg Wrachtrup |
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Mi, 09:45 | HL 25.2 | Investigation of the Temperature Dependence of the Critical Points E0 and E0+Δ0 of Bulk Ge — •Carola Emminger, Nuwanjula Samarasingha, Farzin Abadizaman, and Stefan Zollner |
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Mi, 10:00 | HL 25.3 | Application of Flash Lamp Annealing for Controlled Nickel Silicidation of Silicon Nanowires — •Muhammad Bilal Khan, Dipjyoti Deb, Slawomir Prucnal, Artur Erbe, and Yordan M. Georgiev |
4364 Ergebnisse auf 437 Seiten: 1 … 156 157 158 159 160 … 437