Regensburg 2019 – wissenschaftliches Programm

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4364 Ergebnisse auf 437 Seiten: 1 … 162 163 164 165 166 … 437

Mi, 15:00	HL 34.1	Revisiting the electronic structure of vanadium doped In₂S₃ — •Elaheh Ghorbani, Paul Erhart, and Karsten Albe

Mi, 15:15	HL 34.2	Angle-resolved electroreflectance spectroscopy on CIGS solar cell absorber and buffer layers — •Jasmin Seeger, Jonas Grutke, Wolfram Witte, Dimitrios Hariskos, Oliver Kiowski, Heinz Kalt, and Michael Hetterich

Mi, 15:30	HL 34.3	Spatially resolved composition and functionality of high efficiency Cu(In,Ga)Se2 thin film solar cells — •Christian Plass, Maurizio Ritzer, Philipp Schöppe, Sven Schönherr, Philip Jackson, Roland Wuerz, Claudia S. Schnohr, and Carsten Ronning

Mi, 15:45	HL 34.4	Intrinsic point defects in kesterite-type Cu₂ZnGeSe₄ compound semiconductors — •Daniel Fritsch and Susan Schorr

Mi, 16:15	HL 34.5	2D sb2s3 periodic structure induced absorption enhancement — •Wei Wang, Patrick Pfeiffer, and Lukas Schmidt-Mende

Mi, 16:30	HL 34.6	Numerical and experimental analysis of the time resolved photo-luminescence method at the buffer-absorber interface of CIGS thin film solar cell — •Ashwin Hariharan, Ievgeniia Savchenko, Jörg Ohland, Hippolyte Hirwa, and Stephan Heise

Mi, 17:30	HL 35.1	Temperature dependent capacitance-voltage spectroscopy of self-assembled GaN quantum dot ensembles — •Carlo Alberto Sgroi, Julien Brault, Jean-Yves Duboz, Arne Ludwig, and Andreas D. Wieck

Mi, 17:30	HL 35.2	Quantum well states of GaN/AlN studied by angle-resolved photoelectron spectroscopy — •Felix Paßlack, Mahdi Hajlaoui, Stefano Ponzoni, Mirko Cinchetti, Thomas Zentgraf, Donat Josef As, and Michael Deppe

Mi, 17:30	HL 35.3	Comparison of GaN layers grown by Molecular Beam Epitaxy and by Sputtering technique — •Anne Sekels, Pascal Hille, Philipp Schurig, Martin Becker, Jörg Schörmann, and Angelika Polity

Mi, 17:30	HL 35.4	Electron Beam Induced Current (EBIC) Investigations of Freshly Introduced a-screw Dislocations in GaN — •Tobias Westphal and Michael Seibt

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