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A: Fachverband Atomphysik

A 28: Interaction with VUV and X-ray light

A 28.3: Vortrag

Donnerstag, 14. März 2019, 11:00–11:15, S HS 3 Physik

Photoionoization of low charged silicon ions — •Ticia Buhr¹, Alexander Perry-Sassmannshausen¹, Sebastian Stock^2,3, Jens Buck⁴, Simon Reinwardt⁵, Michael Martins⁵, Sándor Ricz⁶, Alfred Müller¹, Stephan Fritzsche^2,3, and Stefan Schippers¹ — ¹Justus-Liebig-Universität Gießen, Germany — ²Helmholtz-Institut Jena, Germany — ³Friedrich-Schiller-Universität Jena, Germany — ⁴FS-PE, DESY, Hamburg, Germany — ⁵Universität Hamburg, Germany — ⁶Institute for Nuclear Research, Hungarian Academy of Sciences, Debrecen, Hungary

Single and multiple photoionization of low charged atomic silicon ions (Si¹⁺, Si²⁺ and Si³⁺) have been investigated in the vicinity of the silicon K-edge using the PIPE setup [1] at the beam line P04 of the synchrotron light source PETRA III (Hamburg, Germany) employing the photon-ion merged-beams technique. Absolute cross sections, precise K-shell ionization resonance parameters (positions, widths and strengths) for these ions and branching ratios for the various product-ion charge states have been determined. The experimental results are compared with theoretical calculations. Such data are of immediate interest for x-ray astrophysics [2].
[1] S. Schippers et al., J. Phys. B 47, 115602 (2014).
[2] T. Holczer et al., Astrophys. J. 708, 981 (2010).