Rostock 2019 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 57: Poster: Quantum Optics and Photonics III
Q 57.41: Poster
Thursday, March 14, 2019, 16:15–18:15, S Fobau Physik
Comparison of different silicon nitride materials for technological fabrication of photonic components — •Oliver Kurzel1,2, Harald Richter1, Mirko Fraschke1, Marco Lisker1, Thomas Grabolla1, Lars Zimmermann1,3, and Andreas Mai1,2 — 1IHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder) — 2Technische Hochschule Wildau — 3Technische Universität Berlin
In the recent years silicon nitride (SiN) was demonstrated as a high performance alternative solution for photonic integrated circuits in silicon photonics platform with additional features and strength. This work is focused on the development of a manufacturing process for SiN waveguides and grating couplers. SiN is deposited by either Low Pressure Chemical Vapor Deposition at high temperature or by Plasma Enhanced CVD at low temperature, to enhance material properties for photonic device applications. Different technological steps were identified with a significant influence to the performance of high-quality SiN waveguides: Surface roughness on top and on the sidewalls of the waveguide was decreased by additional polish steps as well as by optimization of the SiN plasma etch process, respectively. The plasma etch process using a CF chemistry results in waveguides characterized by rectangular profiles. The hydrogen concentration in SiN is reduced by a final annealing step. Propagation loss values less than 0.5 dB/cm verify the manufacturing process quality. Finally, influence of high temperature annealing was investigated which currently restricts applications of such photonic components for integration in CMOS technologies.