Bonn 2020 – scientific programme

The DPG Spring Meeting in Bonn had to be cancelled! Read more ...

Parts | Days | Selection | Search | Updates | Downloads | Help

HK: Fachverband Physik der Hadronen und Kerne

HK 62: Combined Instrumentation Session: Silicon Strip Detectors (joint session HK/T)

HK 62.1: Talk

Friday, April 3, 2020, 11:00–11:15, H-HS XIII

Investigation of Irradiated silicon strip Sensors using the Trasient Current Technique — •Nicky Potters¹, Christian Scharf², Heiko Lacker², Ingo Bloch³, and Johanna Stachel¹ — ¹Ruprecht-Karls-Universität Heidelberg, Heidelberg ,Germany — ²Humboldt-Universität zu Berlin, Berlin, Germany — ³Deutsches Elektronen-Synchrotron (DESY), Zeuthen, Germany

A new edge-TCT setup has been built and commissioned at DESY Zeuthen. The setup allows for charge injection at defined depth or at the surface of un-irradiated and irradiated ATLAS17LS silicon strip sensors using red and infrared laser light with 100 ps pulse width and a minimum beam diameter of w₀ =7 µ m. The current induced by the injected carriers is measured with GHz bandwidth electronics in up to four channels and information on the electric field and other quantities can be extracted at defined positions in the sensors. Results of the commissioning of the setup using non-irradiated silicon strip sensors as well as measurements of irradiated strip sensors will be presented. The sensors were irradiated with 70 MeV/c protons to equivalent fluences of 1.0· 10¹³ cm⁻², 3.7 · 10¹⁴ cm⁻², 1.0· 10¹⁵ cm⁻², 1.3· 10¹⁶ cm⁻² and with 1 MeV neutrons to 4.0· 10¹⁴ cm⁻², 1.0· 10¹⁴ cm⁻², 1.3· 10¹⁵ cm⁻², and 5.0· 10¹⁶ cm⁻². The position-dependent electric field has been determined by using a new method of fitting the edge-TCT data. Additionally, strip sensors with different strip metal and strip implant widths have been studied.