Bonn 2020 – scientific programme
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T: Fachverband Teilchenphysik
T 108: Combined instrumentation session II: Silicon strip detectors (joint session HK/T)
T 108.1: Talk
Friday, April 3, 2020, 11:00–11:15, H-HS XIII
Investigation of Irradiated silicon strip Sensors using the Trasient Current Technique — •Nicky Potters1, Christian Scharf2, Heiko Lacker2, Ingo Bloch3, and Johanna Stachel1 — 1Ruprecht-Karls-Universität Heidelberg, Heidelberg ,Germany — 2Humboldt-Universität zu Berlin, Berlin, Germany — 3Deutsches Elektronen-Synchrotron (DESY), Zeuthen, Germany
A new edge-TCT setup has been built and commissioned at DESY Zeuthen. The setup allows for charge injection at defined depth or at the surface of un-irradiated and irradiated ATLAS17LS silicon strip sensors using red and infrared laser light with 100 ps pulse width and a minimum beam diameter of w0 =7 µ m. The current induced by the injected carriers is measured with GHz bandwidth electronics in up to four channels and information on the electric field and other quantities can be extracted at defined positions in the sensors. Results of the commissioning of the setup using non-irradiated silicon strip sensors as well as measurements of irradiated strip sensors will be presented. The sensors were irradiated with 70 MeV/c protons to equivalent fluences of 1.0· 1013 cm−2, 3.7 · 1014 cm−2, 1.0· 1015 cm−2, 1.3· 1016 cm−2 and with 1 MeV neutrons to 4.0· 1014 cm−2, 1.0· 1014 cm−2, 1.3· 1015 cm−2, and 5.0· 1016 cm−2. The position-dependent electric field has been determined by using a new method of fitting the edge-TCT data. Additionally, strip sensors with different strip metal and strip implant widths have been studied.